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SONY DSC

Single Element Detectors and Pixelated Detector Arrays

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Voxtel is a leading developer, manufacturer and supplier of sophisticated detectors for a wide range of government, industrial and scientific applications. These detectors include industry’s highest quantum efficiency InGaAs photodetectors, industry’s highest gain and lowest excess noise InGaAs avalanche photodiodes (APDs), high pixel density and large area APD arrays, and Silicon photomultiplier arrays (SiPMs) and silicon single photon sensitive avalanche photodiodes (SPADs). These products are available in a variety of package formats, including robust hermetic and cryogenic housings, TE-cooled TO-8 packages, uncooled TO packages, and bare die.

INGAAS APD and PIN DETECTORS:

DeschutesTM Series APDs

Key product features:

  • very low excess noise (~ k<0.2)
  • moderate gain (M<20) and low dark current is optimal for low bandwidth optical receivers where only moderate gain is required to overcome electronic noise
  • available in collection areas ranging from 30-μm diameter to 500-μm diameter

SiletzTM Series APDs

Key product features:

  • ultra-low excess noise (~ k<0.02)
  • high gain (M<75)  is optimal for high bandwidth photoreceiver applications, where low excess noise gain is required to overcome electronic noise
  •  industry’s leading low bit error rate (BER) and low false alarm rate (FARs) performance
  • available in collection areas ranging from 30-μm to 500-μm diameter

InGaAs PIN Photodetectors

Key product features:

  • high quantum efficiency (QE>95%) provides unsurpassed sensitivity and signal-to-noise (STN) performance
  • Highly uniform response over areas as large as 3-mm diameter

APD Specifications, Options, and Ordering Information

APD DiameterOptimal Operating GainFeaturesPart Number
DESCHUTES APDs
30 um20Submounted APD DieVFC1-EBZA
75 um20Submounted APD DieVFC1-JBZA
TO-46 Packaged APDVFC1-JCAA
TO-8 w/3-stage TECVFC1-JKAA
200 um20Submounted APD DieVFC1-NBZA
TO-46 Packaged APDVFC1-NCAA
TO-8 w/3-stage TECVFC1-NKAA
500 um20Submounted APD DieVFC1-PBZA
TO-8 w/3-stage TECVFC1-PKAA
SILETZ APDS
30 um45Submounted APD DieVFP1-EBZA
TO-46 Packaged APDVFP1-ECAA
TO-8 w/3-stage TECVFP1-EKAA
75 um45Submounted APD DieVFP1-JBZA
TO-46 Packaged APDVFP1-JCAA
TO-8 w/3-stage TECVFP1-JKAA
200 um45Submounted APD DieVFP1-NBZA
TO-46 Packaged APDVFP1-NCAA
TO-8 w/3-stage TECVFP1-NKAA
PIN DETECTORS
300 umNASubmounted PIN DiePPE1-QBZA
650 umNASubmounted PIN DiePPE1-RBZA
1150 umNASubmounted PIN DiePPE1-SBZA

SILICON DETECTORS:

Silicon Photomultipliers (SiPMs)

Key product features:

  • single photon sensitivity in the visible spectral range
  • 1 x 1 mm2 and 3 x 3 mm2 detectors available large area
  • low dark count rates
SizeSub-pixelsPackagingPart Number
1-mm x 1-mm1,024TO-8 w/3-stage TECSQBF-EKAA
3-mm x 3-mm360,000TO-39SQB2-DGTA

PIXELATED DETECTOR ARRAYS:

InGaAs APD Detector Arrays Key product features:

  • fabricated using DeschutesTM and SiletzTM  APD technologies
  • response from 850 nm out to 1700 nm
  • optional “extended blue” response can extend cuton wavelength to below 500 nm
  • back-illuminated mesa detector architecture allows for fast optical overload recovery
  • highly uniform response
  • good radiation tolerance
  • low pixel defect counts
  • array sizes up to 1K x 1K
  • pixel sizes ranging from 10×10 µm2 to 1×1 mm2
  • pixel microlense arrays optional

Detector Array Specifications and Part Numbers

MaterialArray SizePixel PitchGainFeaturesPart Number
InGaAs32 x 32 36 um20Back-illuminated , Mesa Architecture Deschutes APD Arrays with under bump metalizationVFCF-FAZA
InGaAs128 x 12842 um20Back-illuminated , Mesa Architecture Deschutes APD Arrays with under bump metalizationVFCH-GAZA
InGaAs32 x 32 36 um45Back-illuminated , Mesa Architecture Siletz APD Arrays with under bump metalizationVFPF-FAZA
InGaAs128 x 12842 um45Back-illuminated , Mesa Architecture Siletz APD Arrays with under bump metalizationVFPH-GAZA

InGaAs PIN Detector Arrays

Key product features:

  • fabricated using Voxtel’s high QE (some models exceed 95%) InGaAs PIN detectors
  • response from 850 nm out to 1700 nm (extended blue response optional)
  • a back-illuminated mesa detector architecture allows for fast optical overload recovery
  • high uniformity
  • good radiation tolerance
  • low pixel defect counts
  • array sizes from 2×2 up to 2K x 2K
  • pixel sizes ranging from 10×10 µm2 to 3×3 mm2

Silicon Single Photon Sensitive (SPAD) Arrays

Key product features:

  • fabricated using low cost, high volume CMOS processes
  • optimized for low dark count rate (DCR) and  high detection efficiency (DQE)
  • back-illuminated versions available for ultraviolet and extended-red response
  • trench isolation for reduced optical and electrical cross-talk